Stability and Electronic property of Vacancy Defects in Silicon Carbide Nanosheet based on DFTB
ประชุมวิชาการ
เรื่อง: Stability and Electronic property of Vacancy Defects in Silicon Carbide Nanosheet based on DFTB
ผู้แต่ง: O. Arayawut,A. Marutaphan, K.Timsorn, Y. Seekaew, and C. Wongchoosuk
บรรณานุกรม:
O. Arayawut,A. Marutaphan, K.Timsorn, Y. Seekaew, and C. Wongchoosuk (2017, May 24-26). Stability and Electronic property of Vacancy Defects in Silicon Carbide Nanosheet based on DFTB. Siam Physics Congress 2017, Rayong Marriott Resort & Spa, Thailand.